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iqd005n04nm6cgatma1 SiC N-Channel MOSFET, 610 A, 40 V, 9-Pin PG-TTFN-9 Infineon IQD005N04NM6CGATMA1
iqd005n04nm6cgatma1 SiC N-Channel MOSFET, 610 A, 40 V, 9-Pin PG-TTFN-9 Infineon IQD005N04NM6CGATMA1
The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a top choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality. Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems
Infineon

SiC N-Channel MOSFET, 610 A, 40 V, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQD005N04NM6CGATMA1
Enrgtech Part No:
ET28373742
Warranty:
Manufacturer
£ 3.00

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Channel Type:

N

Maximum Continuous Drain Current:

610 A

Maximum Drain Source Voltage:

40 V

Series:

OptiMOS

Package Type:

PG-TTFN-9

Mounting Type:

Surface Mount

Pin Count:

9

Channel Mode:

Enhancement

Transistor Material:

SiC

Number of Elements per Chip:

1

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