P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

23 A

Maximum Drain Source Voltage:

30 V

Package Type:

PowerPAK 1212-8

Series:

TrenchFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

9 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

57 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Length:

3.3mm

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

3.3mm

Typical Gate Charge @ Vgs:

92 nC @ 10 V

Height:

0.78mm

Minimum Operating Temperature:

-55 °C