N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

Channel Type:

N

Maximum Continuous Drain Current:

11 A

Maximum Drain Source Voltage:

600 V

Package Type:

TO-220

Series:

MDmesh

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

360 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

90 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-25 V, +25 V

Width:

4.6mm

Typical Gate Charge @ Vgs:

30 nC @ 10 V

Length:

10.4mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Height:

15.75mm