Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-323 2N7002KW
Manufacturer:
onsemi
Manufacturer Part No:
2N7002KW
Enrgtech Part No:
ET14508647
Warranty:
Manufacturer
£ 0.10
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Channel Type:
N
Maximum Continuous Drain Current:
300 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-323
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
4.8 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1.1V
Maximum Power Dissipation:
350 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
