N-Channel MOSFET, 280 A, 40 V, 3-Pin TO-220 IRF2804PBF

Channel Type:

N

Maximum Continuous Drain Current:

280 A

Maximum Drain Source Voltage:

40 V

Package Type:

TO-220

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

330 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

160 nC @ 10 V

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

4.83mm

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

9.02mm