N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

Channel Type:

N

Maximum Continuous Drain Current:

11 A

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

360 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±25 V

Typical Gate Charge @ Vgs:

12.5 nC @ 10 V

Width:

6.2mm

Length:

6.6mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Forward Diode Voltage:

1.6V

Minimum Operating Temperature:

-55 °C

Height:

2.17mm