12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3 PMXB40UNEZ
Manufacturer:
Nexperia
Manufacturer Part No:
PMXB40UNEZ
Enrgtech Part No:
ET16800569
Warranty:
Manufacturer
£ 0.06
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
3.2 A
Maximum Drain Source Voltage:
12 V
Package Type:
DFN1010D-3
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
121 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
0.9V
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
8.33 W
Transistor Configuration:
Single
