

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Summary of Features- Low R DS(on) in small package
- Low gate charge
- Lower output charge
- Logic level compatibility
- Higher power density designs
- Higher switching frequency
- Reduced parts count wherever 5V supplies are available
- Driven directly from microcontrollers (slow switching)
- System cost reduction
- Wireless charging
- Adapter
- Telecom

N-Channel MOSFET, 40 A, 80 V, 8-Pin PQFN 3 x 3 BSZ070N08LS5ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
BSZ070N08LS5ATMA1
Enrgtech Part No:
ET21696003
Warranty:
Manufacturer
£ 0.32
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
40 A
Maximum Drain Source Voltage:
80 V
Series:
OptiMOS™ 5
Package Type:
PQFN 3 x 3
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.0094 Ω
Maximum Gate Threshold Voltage:
2.3V
Number of Elements per Chip:
1