Deliver to United Kingdom

Oops! We're currently experiencing technical difficulties with our checkout process. For assistance, please contact support at info@enrgtechglobal.com.

bsz070n08ls5atma1 N-Channel MOSFET, 40 A, 80 V, 8-Pin PQFN 3 x 3 Infineon BSZ070N08LS5ATMA1
bsz070n08ls5atma1 N-Channel MOSFET, 40 A, 80 V, 8-Pin PQFN 3 x 3 Infineon BSZ070N08LS5ATMA1

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Summary of Features
  • Low R DS(on) in small package

  • Low gate charge

  • Lower output charge

  • Logic level compatibility
Benefits
  • Higher power density designs

  • Higher switching frequency

  • Reduced parts count wherever 5V supplies are available

  • Driven directly from microcontrollers (slow switching)

  • System cost reduction
Potential Applications
  • Wireless charging

  • Adapter

  • Telecom
Infineon

N-Channel MOSFET, 40 A, 80 V, 8-Pin PQFN 3 x 3 BSZ070N08LS5ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSZ070N08LS5ATMA1
Enrgtech Part No:
ET21696003
Warranty:
Manufacturer
£ 0.32

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

40 A

Maximum Drain Source Voltage:

80 V

Series:

OptiMOS™ 5

Package Type:

PQFN 3 x 3

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.0094 Ω

Maximum Gate Threshold Voltage:

2.3V

Number of Elements per Chip:

1

Related products