N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

Channel Type:

N

Maximum Continuous Drain Current:

210 A

Maximum Drain Source Voltage:

300 V

Package Type:

PLUS264

Series:

HiperFET, Polar3

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

14.5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Maximum Power Dissipation:

1.89 kW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Length:

20.29mm

Maximum Operating Temperature:

+150 °C

Width:

5.31mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

268 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

26.59mm