N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

1.8 A

Maximum Drain Source Voltage:

60 V

Series:

SIPMOS®

Package Type:

SOT-223

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

300 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.8V

Minimum Gate Threshold Voltage:

0.8V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

3.5mm

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

14 nC @ 10 V

Transistor Material:

Si

Length:

6.5mm

Maximum Operating Temperature:

+150 °C

Forward Diode Voltage:

1.3V

Minimum Operating Temperature:

-55 °C

Automotive Standard:

AEC-Q101

Height:

1.6mm