The Microship's silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. It has low capacitances and low gate charge with fast switching speed due to low internal gate resistance (ESR). It allows stable operation at high junction temperature, TJ(max) of 150°C. It is fast and reliable body diode with superior avalanche ruggedness. High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses