N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF

Channel Type:

N

Maximum Continuous Drain Current:

17 A

Maximum Drain Source Voltage:

55 V

Series:

HEXFET

Package Type:

IPAK (TO-251)

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

65 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

45 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Width:

2.39mm

Length:

6.73mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

15 nC @ 5 V

Transistor Material:

Si

Height:

6.22mm

Minimum Operating Temperature:

-55 °C