N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

Channel Type:

N

Maximum Continuous Drain Current:

180 A

Maximum Drain Source Voltage:

100 V

Series:

HEXFET

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

4.5 mO

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

370 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

10.66mm

Width:

4.82mm

Typical Gate Charge @ Vgs:

150 nC @ 10 V

Number of Elements per Chip:

1

Transistor Material:

Si

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

9.02mm

Forward Diode Voltage:

1.3V

3D Model:

https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=79556&DisplayLogo=False