N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC SIHG20N50E-GE3
Manufacturer:
Vishay
Manufacturer Part No:
SIHG20N50E-GE3
Enrgtech Part No:
ET13923050
Warranty:
Manufacturer
£ 2.69
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
19 A
Maximum Drain Source Voltage:
500 V
Package Type:
TO-247AC
Series:
E Series
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
180 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
179 W
