N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

1.9 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

156 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

1.09 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Length:

3.04mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

4.5 nC @ 10 V

Width:

1.4mm

Height:

1.02mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C