The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.
Pb-free lead plating
Maximum power dissipation is 360mW
Maximum power dissipation is 360mW
N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 BSP125H6433XTMA1
Manufacturer:
Infineon
Manufacturer Part No:
BSP125H6433XTMA1
Enrgtech Part No:
ET13933010
Warranty:
Manufacturer
£ 0.16
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Channel Type:
N
Maximum Continuous Drain Current:
120 mA
Maximum Drain Source Voltage:
600 V
Package Type:
SOT-223
Mounting Type:
Surface Mount
Pin Count:
3
Number of Elements per Chip:
1
