Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF

Channel Type:

P

Maximum Continuous Drain Current:

3.4 A

Maximum Drain Source Voltage:

55 V

Package Type:

SOIC

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

170 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

26 nC @ 10 V

Length:

5mm

Number of Elements per Chip:

2

Width:

4mm

Height:

1.5mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C