

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

P-Channel MOSFET, 5.3 A, -20 V, 3-Pin SOT-23 PMV30XPEAR
Manufacturer:
Nexperia
Manufacturer Part No:
PMV30XPEAR
Enrgtech Part No:
ET16800561
Warranty:
Manufacturer
£ 0.32
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
5.3 A
Maximum Drain Source Voltage:
-20 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
57 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-1.25V
Minimum Gate Threshold Voltage:
-0.75V
Maximum Power Dissipation:
5435 mW
Transistor Configuration:
Single