N-Channel MOSFET, 161 A, 30 V, 3-Pin DPAK IRLR7843TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

161 A

Maximum Drain Source Voltage:

30 V

Package Type:

DPAK (TO-252)

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.3V

Minimum Gate Threshold Voltage:

1.4V

Maximum Power Dissipation:

140 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

34 nC @ 4.5 V

Length:

6.73mm

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

6.22mm

Maximum Operating Temperature:

+175 °C

Forward Diode Voltage:

1V

Height:

2.39mm

Minimum Operating Temperature:

-55 °C