

The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-220 IPP60R120P7XKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPP60R120P7XKSA1
Enrgtech Part No:
ET21632928
Warranty:
Manufacturer
£ 0.86
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Channel Type:
N
Maximum Continuous Drain Current:
26 A
Maximum Drain Source Voltage:
600 V
Series:
CoolMOS™ P7
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
120 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Si
Number of Elements per Chip:
1