N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.9 A

Maximum Drain Source Voltage:

30 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

19 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.1V

Minimum Gate Threshold Voltage:

0.5V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-12 V, +12 V

Length:

5mm

Width:

4mm

Typical Gate Charge @ Vgs:

11 nC @ 4.5 V

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

1.5mm

Forward Diode Voltage:

1.2V