P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1

Channel Type:

P

Maximum Continuous Drain Current:

8.8 A

Maximum Drain Source Voltage:

60 V

Series:

SIPMOS®

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

300 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

42 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Length:

6.5mm

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

6.22mm

Typical Gate Charge @ Vgs:

10 nC @ 10 V

Height:

2.3mm

Automotive Standard:

AEC-Q101

Forward Diode Voltage:

1.55V

Minimum Operating Temperature:

-55 °C