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sir5211dp-t1-ge3 Silicon P-Channel MOSFET, 105 A, 20 V, 8-Pin SO-8 Vishay SIR5211DP-T1-GE3
sir5211dp-t1-ge3 Silicon P-Channel MOSFET, 105 A, 20 V, 8-Pin SO-8 Vishay SIR5211DP-T1-GE3
sir5211dp-t1-ge3 Silicon P-Channel MOSFET, 105 A, 20 V, 8-Pin SO-8 Vishay SIR5211DP-T1-GE3
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Vishay

Silicon P-Channel MOSFET, 105 A, 20 V, 8-Pin SO-8 SIR5211DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIR5211DP-T1-GE3
Enrgtech Part No:
ET28368856
Warranty:
Manufacturer
£ 0.38

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Channel Type:

P

Maximum Continuous Drain Current:

105 A

Maximum Drain Source Voltage:

20 V

Package Type:

SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Number of Elements per Chip:

1

Transistor Material:

Silicon

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