The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4
Manufacturer:
STMicroelectronics
Manufacturer Part No:
SCTWA70N120G2V-4
Enrgtech Part No:
ET22535213
Warranty:
Manufacturer
£ 27.06
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Channel Type:
N
Maximum Continuous Drain Current:
91 A
Maximum Drain Source Voltage:
1200 V
Package Type:
HiP247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
0.03 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.9V
Transistor Material:
Silicon
Number of Elements per Chip:
1
