N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1

Channel Type:

N

Maximum Continuous Drain Current:

38 A

Maximum Drain Source Voltage:

650 V

Package Type:

TO-220

Series:

CoolMOS™ C6

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

99 mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation:

35 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Transistor Material:

Si

Typical Gate Charge @ Vgs:

119 nC @ 10 V

Length:

10.65mm

Width:

4.9mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

0.9V

Height:

16.15mm