Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating 60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating 60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 PMV55ENEAR
Manufacturer:
Nexperia
Manufacturer Part No:
PMV55ENEAR
Enrgtech Part No:
ET16800565
Warranty:
Manufacturer
£ 0.08
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
3.1 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
120 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.7V
Minimum Gate Threshold Voltage:
1.3V
Maximum Power Dissipation:
8.36 W
Transistor Configuration:
Single
