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buk9y59-60e115 N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y59-60E,115
buk9y59-60e115 N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y59-60E,115
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems. Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed for use in high performance automotive applications. Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
Nexperia

N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 BUK9Y59-60E,115

Manufacturer:
Nexperia
Manufacturer Part No:
BUK9Y59-60E,115
Enrgtech Part No:
ET16799787
Warranty:
Manufacturer
£ 0.23

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Channel Type:

N

Maximum Continuous Drain Current:

16.7 A

Maximum Drain Source Voltage:

60 V

Package Type:

LFPAK, SOT-669

Series:

BUK9Y59

Mounting Type:

Surface Mount

Pin Count:

4

Maximum Drain Source Resistance:

133 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.45V

Minimum Gate Threshold Voltage:

0.5V

Maximum Power Dissipation:

37 W

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