PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ
Manufacturer:
onsemi
Manufacturer Part No:
FDY1002PZ
Enrgtech Part No:
ET14520071
Warranty:
Manufacturer
£ 0.37
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Channel Type:
P
Maximum Continuous Drain Current:
830 mA
Maximum Drain Source Voltage:
20 V
Series:
PowerTrench
Package Type:
SC-89-6
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
1.8 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
625 mW
Transistor Configuration:
Isolated
