


N-Channel Trench-Gate Power MOSFET, IXYS
Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness
Low on-state Resistance RDS(on)
Superior avalanche ruggedness

N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Manufacturer:
IXYS
Manufacturer Part No:
IXTH110N25T
Enrgtech Part No:
ET11052898
Warranty:
Manufacturer
£ 3.80
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Channel Type:
N
Maximum Continuous Drain Current:
110 A
Maximum Drain Source Voltage:
250 V
Series:
Trench
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
24 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
694 W