N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1

Channel Type:

N

Maximum Continuous Drain Current:

120 mA

Maximum Drain Source Voltage:

600 V

Package Type:

SOT-223

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

45 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.3V

Minimum Gate Threshold Voltage:

1.3V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

4.4 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

6.5mm

Transistor Material:

Si

Width:

3.5mm

Minimum Operating Temperature:

-55 °C

Height:

1.6mm