P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK FQD8P10TM

Channel Type:

P

Maximum Continuous Drain Current:

6.6 A

Maximum Drain Source Voltage:

100 V

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

530 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

12 nC @ 10 V

Length:

6.6mm

Width:

6.1mm

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

2.3mm