N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK IPB027N10N3GATMA1

Channel Type:

N

Maximum Continuous Drain Current:

120 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™ 3

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

4.5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

300 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Width:

9.45mm

Typical Gate Charge @ Vgs:

155 nC @ 10 V

Length:

10.31mm

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

4.57mm