N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1

Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

100 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS™ 3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

15.1 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

125 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

10.31mm

Typical Gate Charge @ Vgs:

42 nC @ 10 V

Width:

9.45mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Transistor Material:

Si

Height:

4.57mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.2V