N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

600 V

Package Type:

PLUS247

Series:

HiperFET, Polar3

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

70 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Maximum Power Dissipation:

1.3 kW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Width:

5.21mm

Transistor Material:

Si

Length:

16.13mm

Typical Gate Charge @ Vgs:

190 nC @ 10 V

Height:

21.34mm

Minimum Operating Temperature:

-55 °C