N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK IPB600N25N3GATMA1

Channel Type:

N

Maximum Continuous Drain Current:

25 A

Maximum Drain Source Voltage:

250 V

Series:

OptiMOS™ 3

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

60 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

136 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Typical Gate Charge @ Vgs:

22 nC @ 10 V

Width:

9.45mm

Length:

10.31mm

Height:

4.57mm

Minimum Operating Temperature:

-55 °C