Silicon N-Channel MOSFET, 6 A, 700 V, 3-Pin TO-220 FP Infineon IPA70R900P7SXKSA1 | IPA70R900P7SXKSA1 | ET21632792

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode

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Silicon N-Channel MOSFET, 6 A, 700 V, 3-Pin TO-220 FP IPA70R900P7SXKSA1

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