N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 IPP60R099P6XKSA1

Channel Type:

N

Maximum Continuous Drain Current:

37.9 A

Maximum Drain Source Voltage:

650 V

Series:

CoolMOS™ P6

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

99 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.5V

Minimum Gate Threshold Voltage:

3.5V

Maximum Power Dissipation:

278 W

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

70 nC @ 10 V

Length:

10.36mm

Width:

4.57mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Height:

15.95mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

0.9V