

The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

N-Channel MOSFET, 23 A, 600 V, 3-Pin TO-220 IPP60R022S7XKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPP60R022S7XKSA1
Enrgtech Part No:
ET21632926
Warranty:
Manufacturer
£ 3.30
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Channel Type:
N
Maximum Continuous Drain Current:
23 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Series:
IPP60R
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
22 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Si
Number of Elements per Chip:
1