The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin TO-247-4 NTH4L045N065SC1
Manufacturer:
onsemi
Manufacturer Part No:
NTH4L045N065SC1
Enrgtech Part No:
ET21212035
Warranty:
Manufacturer
£ 5.03
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
55 A
Maximum Drain Source Voltage:
650 V
Series:
SiC Power
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
0.05 Ω
Maximum Gate Threshold Voltage:
4.3V
Number of Elements per Chip:
1
Transistor Material:
SiC
