The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
N-Channel MOSFET Transistor & Diode, 51 A, 650 V, 3-Pin DPAK IPD60R170CFD7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPD60R170CFD7ATMA1
Enrgtech Part No:
ET21626897
Warranty:
Manufacturer
£ 0.67
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
51 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-252
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.17 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Number of Elements per Chip:
1
