

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

N-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 PMV100ENEAR
Manufacturer:
Nexperia
Manufacturer Part No:
PMV100ENEAR
Enrgtech Part No:
ET16800548
Warranty:
Manufacturer
£ 0.08
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
3 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
118 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
4.5 W
Transistor Configuration:
Single