Infineon HEXFET N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC IRF7855TRPBF

Infineon HEXFET N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC IRF7855TRPBF

Manufacturer:
Manufacturer Part No:
IRF7855TRPBF
Enrgtech Part No:
ET14089475
Warranty:
Manufacturer
£ 0.8800
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Channel Type:
N
Maximum Continuous Drain Current:
12 A
Maximum Drain Source Voltage:
60 V
Series:
HEXFET
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
9.4 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.9V
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
2.5 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Number of Elements per Chip:
1
Width:
4mm
Maximum Operating Temperature:
+150 °C
Transistor Material:
Si
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Length:
5mm
Minimum Operating Temperature:
-55 °C
Height:
1.5mm
pdf icon
0900766b8132f4c6.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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