N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC IRF7855TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

12 A

Maximum Drain Source Voltage:

60 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

9.4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.9V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4mm

Typical Gate Charge @ Vgs:

26 nC @ 10 V

Transistor Material:

Si

Length:

5mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

1.5mm