


N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF
Manufacturer:
Infineon
Manufacturer Part No:
IRLU8743PBF
Enrgtech Part No:
ET13987860
Warranty:
Manufacturer
£ 0.94
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Channel Type:
N
Maximum Continuous Drain Current:
160 A
Maximum Drain Source Voltage:
30 V
Package Type:
IPAK (TO-251)
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
3 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.35V
Minimum Gate Threshold Voltage:
1.35V
Maximum Power Dissipation:
135 W