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bsz180p03ns3gatma1 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ180P03NS3GATMA1
bsz180p03ns3gatma1 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ180P03NS3GATMA1
The Infineon range of OptiMOS single P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, battery management and load switching. It has 150 °C operating temperature
Qualified according to JEDEC for target applications
Infineon

P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 BSZ180P03NS3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSZ180P03NS3GATMA1
Enrgtech Part No:
ET21606514
Warranty:
Manufacturer
£ 0.15

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Channel Type:

P

Maximum Continuous Drain Current:

39.6 A

Maximum Drain Source Voltage:

30 V

Package Type:

PQFN 3 x 3

Series:

OptiMOS P3

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.018 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.1V

Transistor Material:

Si

Number of Elements per Chip:

1

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