Infineon OptiMOS P3 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 BSZ180P03NS3GATMA1

For more information please check the datasheets.

Infineon OptiMOS P3 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 BSZ180P03NS3GATMA1

Manufacturer:

Infineon

Manufacturer Part No:

BSZ180P03NS3GATMA1

Enrgtech Part No:

ET21606514

Warranty:

Manufacturer

£ 0.1800

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Channel Type:

Maximum Continuous Drain Current:

39.6 A

Maximum Drain Source Voltage:

30 V

Series:

OptiMOS P3

Package Type:

PQFN 3 x 3

Mounting Type:

Surface Mount

Pin Count:

Maximum Drain Source Resistance:

0.018 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.1V

Transistor Material:

Number of Elements per Chip:

A700000007726328.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS P3 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PQFN 3 x 3 BSZ180P03NS3GATMA1

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