N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.7 A

Maximum Drain Source Voltage:

100 V

Series:

HEXFET

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

200 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

48 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4.69mm

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Length:

10.54mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.3V

Height:

8.77mm