N-Channel MOSFET, 9.2 A, 600 V, 3-Pin D2PAK IRFS9N60APBF

Channel Type:

N

Maximum Continuous Drain Current:

9.2 A

Maximum Drain Source Voltage:

600 V

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

750 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

170 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

49 nC @ 10 V

Length:

10.67mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Width:

9.65mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

4.83mm