N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3

Channel Type:

N

Maximum Continuous Drain Current:

3 A

Maximum Drain Source Voltage:

500 V

Package Type:

DPAK (TO-252)

Series:

D Series

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

3.2 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

104 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Typical Gate Charge @ Vgs:

6 nC @ 10 V

Width:

6.22mm

Length:

6.73mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

2.38mm