P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK IPB80P03P4L07ATMA1

Channel Type:

P

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

30 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS P

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

12.3 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

88 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +5 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Length:

10mm

Typical Gate Charge @ Vgs:

63 nC @ 10 V

Width:

9.25mm

Transistor Material:

Si

Height:

4.4mm

Minimum Operating Temperature:

-55 °C