Infineon OptiMOS™ N-Channel MOSFET, 300 A, 30 V, 8-Pin HSOF-8 IPT004N03LATMA1

Infineon OptiMOS™ N-Channel MOSFET, 300 A, 30 V, 8-Pin HSOF-8 IPT004N03LATMA1

Manufacturer:
Manufacturer Part No:
IPT004N03LATMA1
Enrgtech Part No:
ET16793419
Warranty:
Manufacturer
£ 2.1200
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Channel Type:
N
Maximum Continuous Drain Current:
300 A
Maximum Drain Source Voltage:
30 V
Package Type:
HSOF-8
Series:
OptiMOS™
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
500 μΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.2V
Minimum Gate Threshold Voltage:
0.7V
Maximum Power Dissipation:
300 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
252 nC @ 10 V
Length:
10.1mm
Number of Elements per Chip:
1
Width:
10.58mm
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
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0900766b81560ce5.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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