Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC IRF7309TRPBF
Manufacturer:
InfineonManufacturer Part No:
IRF7309TRPBF
Enrgtech Part No:
ET14041422
Warranty:
Manufacturer
£ 0.26
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Channel Type:
N, P
Maximum Continuous Drain Current:
3 A, 4 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
80 mΩ, 160 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.4 W
